Electronic-structure origin of the anisotropic thermopower of nanolaminated Ti3SiC2 determinedby polarized x-ray spectroscopy and Seebeck measurements
نویسندگان
چکیده
Martin Magnuson,1 Maurizio Mattesini,2,3 Ngo Van Nong,4 Per Eklund,1 and Lars Hultman1 1Thin Film Physics Division, Department of Physics, Chemistry and Biology, IFM, Linköping University, SE-58183 Linköping, Sweden 2Departamento de Fı́sica de la Tierra, Astronomı́a y Astrofı́sica I, Universidad Complutense de Madrid, Madrid, E-28040, Spain 3Instituto de Geociencias (CSIC-UCM), Facultad de CC. Fı́sicas, E-28040 Madrid, Spain 4Department of Energy Conversion and Storage, Technical University of Denmark, Risö Campus, 4000 Roskilde, Denmark (Received 29 May 2011; revised manuscript received 16 February 2012; published 22 May 2012)
منابع مشابه
The origin of anisotropy and high density of states in the electronic structure of Cr2GeC by means of polarized soft x-ray spectroscopy and ab initio calculations.
The anisotropy in the electronic structure of the inherently nanolaminated ternary phase Cr2GeC is investigated by bulk-sensitive and element selective soft x-ray absorption/emission spectroscopy. The angle-resolved absorption/emission measurements reveal differences between the in-plane and out-of-plane bonding at the (0001) interfaces of Cr2GeC. The Cr L(2, 3), C K, and Ge M1, M(2, 3) emissio...
متن کاملMax-Phases Investigated by Soft X-Ray Emission Spectroscopy
The electronic structures of the MAX-phases Ti3AlC2, Ti3SiC2 and Ti3GeC2 were investigated by soft X-ray emission spectroscopy. These nanolaminated carbide compounds represent a class of layered materials with a combination of properties from both metals and ceramics. The bulksensitive soft X-ray emission technique is shown to be particularly useful for detecting detailed electronic structure i...
متن کاملElectronic transport properties of electron- and hole-doped semiconducting C1b Heusler compounds: NiTi1−xMxSn (M=Sc, V)
The substitutional series of Heusler compounds NiTi1−xMxSn where M =Sc,V and 0 x 0.2 were synthesized and investigated with respect to their electronic structure and transport properties. The results show the possibility to create n-type and p-type thermoelectrics within one Heusler compound. The electronic structure and transport properties were calculated by all-electron ab initio methods and...
متن کاملExploring the microscopic origin of magnetic anisotropies with X-ray magnetic circular dichroism (XMCD) spectroscopy
Symmetry breaking and bonding at interfaces leads to a variety of anisotropy phenomena in transition metal sandwiches and multilayers. The charge density, the spin density and the orbital moment become anisotropic. These e!ects can be studied by the X-ray magnetic circular dichroism (XMCD) technique which senses the local anisotropy of charge, spin and angular momentum around an atom that is ex...
متن کاملPhotoemission measurements of Ultrathin SiO2 film at low take-off angles
The surface and interfacial analysis of silicon oxide film on silicon substrate is particularly crucial in the nano-electronic devices. For this purpose, series of experiments have been demonstrated to grow oxide film on Si (111) substrate. Then these films have been used to study the structure of the film by using X-ray photo emission spectroscopy (XPS) technique. The obtained results indicate...
متن کامل